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Laptop Memory

 

 

 

 

 

The high performance 8 byte interface is extensively compatible and highly suitable for system memory upgrade and addition.

DDR-3 Unbuffered SODIMM (Notebook DIMM)

  • JEDEC standard Double Data Rate3 Synchronous DRAMs (DDR3 SDRAMs)with VDD=VDDQ=1.5V Power Supply
  • VDDSPD=3.3V to 3.6V
  • Fully differential clock inputs (CK, /CK) operation
  • Differential Data Strobe (DQS, /DQS)
  • On chip DLL align DQ, DQS and /DQS transition with CK transition
  • Programmable CAS Latency 5, 6, 7, 8, 9, 10
  • Programmable CAS Write latency (CWL) = 5, 6, 7, 8
  • Dynamic On Die Termination supported
  • Fully differential clock operations (CK & /CK)
  • Auto refresh and self-refresh supported
  • 8 banks and 8k refresh cycles / 64ms
  • DDR3 SDRAM Package : JEDEC standard 82ball FBGA(x4/x8) , 100ball FBGA(x16) with support balls
  • Serial presence detect with EEPROM
  • 67.60 x 30.00 mm form factor (4GB: B833SRCF.)
  • Lead-free Products are RoHS compliant

DDR-2 Unbuffered SODIMM (Notebook DIMM)

  • JEDEC compliant Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply
  • All inputs and outputs are compatible with SSTL_1.8 interface
  • Industry standard 67.60 x 30.00 mm form factor on 240 pin glass-epoxy substrate
  • Posted CAS
  • Programmable CAS Latency 3, 4, 5
    • DDR2-800 5-5-5
    • DDR2-667 5-5-5
    • DDR2-667 4-4-4
    • DDR2-533 4-4-4
    • DDR2-400 3-3-3
  • OCD (Off-Chip Driver Impedance Adjustment) and ODT (On-Die Termination)
  • Fully differential clock operations (CK & /CK)
  • Programmable Burst Length 4 / 8 with both sequential and interleave mode
  • Auto refresh and self-refresh supported
  • 8192 refresh cycles / 64ms
  • Serial presence detect with EEPROM
  • DDR2 SDRAM Package: 71 ball(x8 DDP) , 92 ball(x16) FBGA
  • Lead-free Products (RoHS compliant) are available

DDR Unbuffered SODIMM (Notebook DIMM)

  • 200-pin small outline, dual in-line memory module (SO-DIMM)
  • JEDEC compliant
  • Two ranks organization
  • Industry standard 67.60mm width form factor on a glass-epoxy substrate
  • 256Mb or 512Mb DDR SDRAM ICs in 400milTSOP II packages
  • 2.6V±0.1V VDD and VDDQ Power supply for DDR400, 2.5V±0.2V for DDR333 and below
  • All inputs and outputs are compatible with SSTL_2 interface
  • Fully differential clock operations (CK & /CK) with 133/166/200MHz
  • Programmable CAS Latency: DDR266(2, 2.5 clock), DDR333(2.5 clock), DDR400(3 clock)
  • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
  • Edge-aligned DQS with data outs and Center-aligned DQS with data inputs
  • Auto refresh and self-refresh supported
  • 8192 refresh cycles / 64ms
  • Serial Presence Detect (SPD) with EEPROM
  • Lead-free products (RoHS compliant) available